RADIATION EFFECTS IN SOLIDS

被引：4

作者：

LOFERSKI, JJ

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1964年 / 28卷 / 01期

关键词：

D O I：

10.1016/0029-554X(64)90357-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：109 / 118

页数：10

共 18 条

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[4]

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[10] RADIATION DEFECT INTRODUCTION RATES IN N- AND PARA TYPE SILICON IN VICINITY OF RADIATION DAMAGE THRESHOLD [J].

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