AN ANALYSIS OF THE PROCESS OF RECRYSTALLIZATION OF SILICON THIN-FILMS WITH EITHER A SCANNING LASER OR STRIP HEATER

被引：29

作者：

CLINE, HE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2683 / 2691

页数：9

共 21 条

[1]

Biegelsen D. K., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P487

[2] SILICON FOR ELECTRONIC DEVICES [J].

BRADSHAW, SE ;

GOORISSEN, J .

JOURNAL OF CRYSTAL GROWTH, 1980, 48 (04) :514-529

[3]

Calder I. D., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P489

[4] SUB-MICRON EUTECTIC THIN-FILM STRUCTURE [J].

CLINE, HE .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4896-4902

[5] HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM [J].

CLINE, HE ;

ANTHONY, TR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3895-3900

[6] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J].

FAN, JCC ;

GEIS, MW ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :365-367

[7] SINGLE-CRYSTAL SI FILMS ON SIO2 PREPARED BY USING A STATIONARY GRAPHITE HEATER FOR LATERAL EPITAXY BY SEEDED SOLIDIFICATION [J].

FAN, JCC ;

TSAUR, BY ;

GEIS, MW .

APPLIED PHYSICS LETTERS, 1981, 39 (04) :308-310

[8]

FAN JCC, 1982, LASER ELECTRON BEAM, P759

[9] THERMAL CONDUCTIVITY ELECTRICAL RESISTIVITY AND SEEBECK COEFFICIENT OF SILICON FROM 100 TO 1300 DEGREE K [J].

FULKERSON, W ;

MOORE, JP ;

WILLIAMS, RK ;

GRAVES, RS ;

MCELROY, DL .

PHYSICAL REVIEW, 1968, 167 (03) :765-+

[10] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].

GAT, A ;

GERZBERG, L ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :775-778

← 1 2 3 →