FIELD-INDUCED TUNNEL-DIODE IN INDIUM-ANTIMONIDE

被引：11

作者：

MARGALIT, S ^{[1
]}

SHAPPIR, J ^{[1
]}

KIDRON, I ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,ELECT ENGN DEPT,HAIFA,ISRAEL

来源：

关键词：

D O I：

10.1063/1.322152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3999 / 4001

页数：3

共 7 条

[1]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[2] INSULATED GATE TUNNEL JUNCTION TRIODE [J].

HOFSTEIN, SR ;

WARFIELD, G .

[3] THEORY OF TUNNELING [J].

KANE, EO .

[4] A HIGH FIELD TRIODE [J].

NATHANSO.HC .

[5] MOSTS AT CRYOGENIC TEMPERATURES [J].

ROGERS, CG .

[6] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J].

STERN, F .

PHYSICAL REVIEW B, 1972, 5 (12) :4891-&

[7]

WEINBERG ZA, UNPUBLISHED