CONDITIONS FOR AN OXIDE-FREE SI SURFACE FOR LOW-TEMPERATURE PROCESSING - STEADY-STATE BOUNDARY

被引：21
作者：
AGNELLO, PD
SEDGWICK, TO
机构：
[1] IBM T.J. Watson Research Center, New York 10598, Yorktown Heights
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 10期
关键词：
D O I：
10.1149/1.2069009
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The oxidation and removal of surf ace oxides on silicon at low temperatures in an atmospheric-pressure chemical vapor deposition system has been studied. Oxygen concentrations from 5 ppb to 6 ppm and temperatures from 650 to 850-degrees-C were investigated. The oxygen pressure limits to maintaining an oxide-free surface are higher than for vacuum processing due to mass transport of oxygen in the carrier gas.
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页码：2929 / 2934
页数：6
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