LUMINESCENCE EXPERIMENTS ON ACCEPTOR DELTA-DOPED GAAS-ALGAAS SINGLE HETEROJUNCTIONS WITH OPTICALLY TUNABLE ELECTRON-CONCENTRATION

被引：18

作者：

KUKUSHKIN, IV ^{[1
]}

PLAUT, AS ^{[1
]}

VONKLITZING, K ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

SURFACE SCIENCE | 1990年 / 229卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90927-Z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated radiative recombination of 2D-electrons with holes bound to acceptors from a δ-layer, positioned at a well defined distance from the interface, in an n-type GaAs-AlGaAs single heterojunction. Using magnetotransport and magnetooptics we demonstrate that under continuous photoexcitation by the laser light the concentration of 2D-electrons in these heterojunctions can be strongly decreased as compared to the value which is realised in the dark after illumination and that this is accompanied by an enhanced electron mobility. © 1990.

引用

页码：447 / 451

页数：5

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