ELECTRON TRAPPING INSTABILITIES IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

被引：21
|
作者：
YOUNG, ND
GILL, A
机构：
[1] Philips Res. Labs., Redhill, Surrey, Cross Oak Lane
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 01期
关键词：
D O I：
10.1088/0268-1242/5/1/010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The stability of polycrystalline silicon thin film transistors formed at low temperatures has been studied. Charge trapping in the deposited gate oxide is observed over a wide range of conditions. At high gate biases this is due to the passage of a tunnel current, and at lower biases to direct tunnelling into the traps. Trap concentrations, cross sections and energy levels have been deduced based upon a simple trapping model, and an empirical device lifetime model is presented.
引用
收藏
页码：72 / 77
页数：6
相关论文
共 50 条
  • [21] ANALYSIS OF LASER ANNEALED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    CHEN, I
    APPLIED PHYSICS LETTERS, 1983, 43 (08) : 783 - 785
  • [22] 1/fγ noise in polycrystalline silicon thin-film transistors
    Dimitriadis, CA
    Brini, J
    Lee, JI
    Farmakis, FV
    Kamarinos, G
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) : 3934 - 3936
  • [23] ION-IMPLANTATION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    SHEN, DS
    KWOR, RY
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (1-2): : 113 - 117
  • [24] Modeling of kink effect in polycrystalline silicon thin-film transistors
    Deng, Wanling
    Zheng, Xueren
    SOLID-STATE ELECTRONICS, 2009, 53 (06) : 669 - 673
  • [25] NUMERICAL SIMULATIONS OF AMORPHOUS AND POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    HACK, M
    SHAW, JG
    LECOMBER, PG
    WILLUMS, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2360 - L2362
  • [26] Dopant and defect interactions in polycrystalline silicon thin-film transistors
    Valletta, A
    Mariucci, L
    Bonfiglietti, A
    Fortunato, G
    Brotherton, SD
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
  • [27] On-current modeling of polycrystalline silicon thin-film transistors
    Gupta, N
    Tyagi, BP
    PHYSICA SCRIPTA, 2005, 72 (04) : 339 - 342
  • [28] 1/fγ noise in polycrystalline silicon thin-film transistors
    LPCS, ENSERG, 23 rue des Martyrs, 38016 Grenoble Cedex 1, France
    不详
    不详
    J Appl Phys, 7 (3934-3936):
  • [29] GLOW-DISCHARGE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    HIRAI, Y
    OSADA, Y
    KOMATSU, T
    OMATA, S
    AIHARA, K
    NAKAGIRI, T
    APPLIED PHYSICS LETTERS, 1983, 42 (08) : 701 - 703
  • [30] Simulation of the backward current in polycrystalline silicon thin-film transistors
    Baudet, M
    Lhermite, H
    Mohammed-Brahim, T
    POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS, 2001, 80-81 : 379 - 384
12345