CHARACTERISTICS WITH NEGATIVE DIFFERENTIAL RESISTANCE OF A DEVICE USING A SI-SIO2 STRUCTURE

被引：0
|
作者：
TIEN, ND [1 ]
机构：
[1] HANOI POLYTECH INST,MICROELECTR LAB,HANOI,VIETNAM
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 90卷 / 01期
关键词：
D O I：
10.1002/pssa.2210900166
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：K103 / K105
页数：3
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