RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES

被引：224

作者：

CERDEIRA, F

PINCZUK, A

BEAN, JC

BATLOGG, B

WILSON, BA

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.95014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1138 / 1140

页数：3

共 16 条

[1]

ANATASSAKIS E, 1970, SOLID STATE COMMUN, V8, P133

[2] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

SHENG, TT ;

FELDMAN, LC ;

FIORY, AT ;

LYNCH, RT .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :102-104

[3] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[4] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J].

CERDEIRA, F ;

BUCHENAUER, CJ ;

CARDONA, M ;

POLLAK, FH .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :580-+

[5]

CERDEIRA F, J VAC SCI TECHNOL

[6] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY [J].

ENGLERT, T ;

ABSTREITER, G ;

PONTCHARRA, J .

SOLID-STATE ELECTRONICS, 1980, 23 (01) :31-33

[7] RAMAN SCATTERING BY LOCAL MODES IN GERMANIUM-RICH SILICON-GERMANIUM ALLOYS [J].

FELDMAN, DW ;

ASHKIN, M ;

PARKER, JH .

PHYSICAL REVIEW LETTERS, 1966, 17 (24) :1209-&

[8] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J].

FIORY, AT ;

BEAN, JC ;

FELDMAN, LC ;

ROBINSON, IK .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1227-1229

[9] RAMAN-SCATTERING FROM SMALL PARTICLE-SIZE POLYCRYSTALLINE SILICON [J].

IQBAL, Z ;

VEPREK, S ;

WEBB, AP ;

CAPEZZUTO, P .

SOLID STATE COMMUNICATIONS, 1981, 37 (12) :993-996

[10]

LANIN J, 1977, PHYS REV B, V16, P1510

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