EFFECT OF HEAT-TREATMENT ON THE PROPERTIES OF GALLIUM-IMPLANTED POLYCRYSTALLINE SILICON

被引：3
|
作者：
HARRISON, HB
KOMEN, Y
CAO, DX
POGANY, AP
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 09期
关键词：
D O I：
10.1063/1.99820
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：746 / 748
页数：3
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