MEASUREMENT OF HIGH-FIELD CARRIER DRIFT VELOCITIES IN SILICON BY A TIME-OF-FLIGHT TECHNIQUE

被引:112
作者
NORRIS, CB
GIBBONS, JF
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D O I
10.1109/T-ED.1967.15893
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:38 / +
页数:1
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共 5 条
[1]   NON-OHMIC BEHAVIOUR IN SILICON [J].
DAVIES, EA ;
GOSLING, DS .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (APR) :413-&
[2]  
DEARNALEY G, 1964, SEMICONDUCTOR COUNTE, P10
[3]  
PRIOR AC, 1959, J PHYS CHEM SOL, V12
[4]   MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J].
RYDER, EJ .
PHYSICAL REVIEW, 1953, 90 (05) :766-769
[5]  
VIATSKIN AI, 1958, SOV PHYS-TECH PHYS, V3, P690