HIGH-QUALITY ULTRATHIN INAS/GAAS QUANTUM WELLS GROWN BY STANDARD AND LOW-TEMPERATURE MODULATED-FLUXES MOLECULAR-BEAM EPITAXY

被引:64
作者
GERARD, JM
MARZIN, JY
机构
关键词
D O I
10.1063/1.99859
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:568 / 570
页数:3
相关论文
共 12 条
[1]   GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].
GOLDSTEIN, L ;
GLAS, F ;
MARZIN, JY ;
CHARASSE, MN ;
LEROUX, G .
APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101
[2]   MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THIN GAAS/INAS(100) MULTIPLE QUANTUM WELL STRUCTURES [J].
GRUNTHANER, FJ ;
YEN, MY ;
FERNANDEZ, R ;
LEE, TC ;
MADHUKAR, A ;
LEWIS, BF .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :983-985
[3]   INTERMIXING AT INAS/GAAS AND GAAS/INAS INTERFACES [J].
GUILLE, C ;
HOUZAY, F ;
MOISON, JM ;
BARTHE, F .
SURFACE SCIENCE, 1987, 189 :1041-1046
[4]   LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J].
HORIKOSHI, Y ;
KAWASHIMA, M ;
YAMAGUCHI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10) :L868-L870
[5]   1ST STAGES OF THE MBE GROWTH OF INAS ON (001)GAAS [J].
HOUZAY, F ;
GUILLE, C ;
MOISON, JM ;
HENOC, P ;
BARTHE, F .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :67-72
[6]   INHOMOGENEOUS LATTICE DISTORTION IN THE HETEROEPITAXY OF INAS ON GAAS [J].
MUNEKATA, H ;
SEGMULLER, A ;
CHANG, LL .
APPLIED PHYSICS LETTERS, 1987, 51 (08) :587-589
[7]   SELF-MASKING SELECTIVE EPITAXY BY MOLECULAR-BEAM METHOD [J].
NAGATA, S ;
TANAKA, T .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :940-942
[8]   GROWTH OF A (GAAS)N/(INAS)N SUPERLATTICE SEMICONDUCTOR BY MOLECULAR-BEAM EPITAXY [J].
OHNO, H ;
KATSUMI, R ;
TAKAMA, T ;
HASEGAWA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09) :L682-L684
[9]  
PAQUET D, UNPUB
[10]   GROWTH-CONDITIONS AND CHARACTERIZATION OF INGAAS GAAS STRAINED LAYERS SUPERLATTICES [J].
QUILLEC, M ;
GOLDSTEIN, L ;
LEROUX, G ;
BURGEAT, J ;
PRIMOT, J .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2904-2909