HIGH-QUALITY ULTRATHIN INAS/GAAS QUANTUM WELLS GROWN BY STANDARD AND LOW-TEMPERATURE MODULATED-FLUXES MOLECULAR-BEAM EPITAXY

被引：64
作者：
GERARD, JM
MARZIN, JY
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 07期
关键词：
D O I：
10.1063/1.99859
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：568 / 570
页数：3
相关论文
共 12 条
  • [1] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES
    GOLDSTEIN, L
    GLAS, F
    MARZIN, JY
    CHARASSE, MN
    LEROUX, G
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1099 - 1101
  • [2] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THIN GAAS/INAS(100) MULTIPLE QUANTUM WELL STRUCTURES
    GRUNTHANER, FJ
    YEN, MY
    FERNANDEZ, R
    LEE, TC
    MADHUKAR, A
    LEWIS, BF
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 983 - 985
  • [3] INTERMIXING AT INAS/GAAS AND GAAS/INAS INTERFACES
    GUILLE, C
    HOUZAY, F
    MOISON, JM
    BARTHE, F
    [J]. SURFACE SCIENCE, 1987, 189 : 1041 - 1046
  • [4] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY
    HORIKOSHI, Y
    KAWASHIMA, M
    YAMAGUCHI, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870
  • [5] 1ST STAGES OF THE MBE GROWTH OF INAS ON (001)GAAS
    HOUZAY, F
    GUILLE, C
    MOISON, JM
    HENOC, P
    BARTHE, F
    [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 67 - 72
  • [6] INHOMOGENEOUS LATTICE DISTORTION IN THE HETEROEPITAXY OF INAS ON GAAS
    MUNEKATA, H
    SEGMULLER, A
    CHANG, LL
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (08) : 587 - 589
  • [7] SELF-MASKING SELECTIVE EPITAXY BY MOLECULAR-BEAM METHOD
    NAGATA, S
    TANAKA, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 940 - 942
  • [8] GROWTH OF A (GAAS)N/(INAS)N SUPERLATTICE SEMICONDUCTOR BY MOLECULAR-BEAM EPITAXY
    OHNO, H
    KATSUMI, R
    TAKAMA, T
    HASEGAWA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09): : L682 - L684
  • [9] PAQUET D, UNPUB
  • [10] GROWTH-CONDITIONS AND CHARACTERIZATION OF INGAAS GAAS STRAINED LAYERS SUPERLATTICES
    QUILLEC, M
    GOLDSTEIN, L
    LEROUX, G
    BURGEAT, J
    PRIMOT, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2904 - 2909
12