SILICON SURFACE BARRIER DETECTORS - FABRICATION TEST METHODS PROPERTIES AND SOME APPLICATIONS

被引：10

作者：

ANDERSSO.G

ZAUSIG, B

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1966年 / 40卷 / 02期

关键词：

D O I：

10.1016/0029-554X(66)90387-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：277 / +

页数：1

共 23 条

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[2] ANDERSSONLINDST.G, TO BE PUBLISHED
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[4] CONSTRUCTION AND PERFORMANCES OF SILICON SURFACE BARRIER DETECTORS
CAPPELLANI, F
RESTELLI, G
[J]. NUCLEAR INSTRUMENTS & METHODS, 1964, 25 (02): : 230 - 236
[5] THE SEMICONDUCTOR SURFACE BARRIER FOR NUCLEAR PARTICLE DETECTION
DEARNALEY, G
WHITEHEAD, AB
[J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02): : 205 - 226
[6] DEARNALEY G, 1963, SEMICONDUCTOR COUNTE
[7] DEARNALEY G, AERER3662
[8] FOX RJ, 1962, IRE T NUCL SCI, VNS9, P213
[9] NEW PARTICLE IDENTIFIER TECHNIQUE FOR Z EQUALS 1 + Z EQUALS 2 PARTICLES IN ENERGY RANGE TO 10 MEV
GOULDING, FS
LANDIS, DA
CERNY, J
PEHL, RH
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) : 388 - +
[10] HANSEN NJ, 1962, IRE T NUCL SCI, VNS9, P217