LOW-TEMPERATURE ALUMINUM-OXIDE DEPOSITION USING TRIMETHYLALUMINUM

被引：25

作者：

EHLE, RS

BALIGA, BJ

KATZ, W

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 03期

关键词：

D O I：

10.1007/BF02650866

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：587 / 601

页数：15

共 11 条

[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE [J].

ABOAF, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :948-&

[2] GROWTH OF SILICA AND PHOSPHOSILICATE FILMS [J].

BALIGA, BJ ;

GHANDHI, SK .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :990-994

[3] PREPARATION AND PROPERTIES OF TIN OXIDE-FILMS FORMED BY OXIDATION OF TETRAMETHYLTIN [J].

BALIGA, BJ ;

GHANDHI, SK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :941-944

[4]

DUFFY MT, 1970, RCA REV, P754

[5] PROPERTIES OF ALUMINUM OXIDE FILMS OBTAINED FROM NITROUS OXIDE AND ALUMINUM TRIMETHYL [J].

HALL, LH ;

ROBINETTE, WC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (10) :1624-+

[6] GAAS INVERSION-TYPE MIS TRANSISTORS [J].

ITO, T ;

SAKAI, Y .

SOLID-STATE ELECTRONICS, 1974, 17 (07) :751-759

[7] CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .1. DEPOSITION TECHNIQUES [J].

KERN, W ;

HEIM, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) :562-&

[8]

LEED PW, 1961, CERAMICS, P15

[9] PREPARATION AND PROPERTIES OF ZINC-OXIDE FILMS GROWN BY THE OXIDATION OF DIETHYLZINC [J].

SHEALY, JR ;

BALIGA, BJ ;

FIELD, RJ ;

GHANDHI, SK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :558-561

[10]

SILVESTRI VJ, 1978, J ELECTROCHEM SOC, V123, P902

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