AMORPHOUS-SILICON LANGMUIR-BLODGETT FILM FIELD-EFFECT TRANSISTOR

被引：21

作者：

LLOYD, JP ^{[1
]}

PETTY, MC ^{[1
]}

ROBERTS, GG ^{[1
]}

LECOMBER, PG ^{[1
]}

SPEAR, WE ^{[1
]}

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

THIN SOLID FILMS | 1983年 / 99卷 / 1-3期

关键词：

D O I：

10.1016/0040-6090(83)90396-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：297 / 304

页数：8

共 17 条

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ROBERTS, GG ;

VINCETT, PS ;

BARLOW, WA .

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[12]

ROBERTS GG, 1981, P C INSULATING FILMS, P56

[13] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN ADDRESSABLE LIQUID-CRYSTAL DISPLAY PANELS [J].

SNELL, AJ ;

MACKENZIE, KD ;

SPEAR, WE ;

LECOMBER, PG ;

HUGHES, AJ .

APPLIED PHYSICS, 1981, 24 (04) :357-362

[14] DOPED AMORPHOUS-SEMICONDUCTORS [J].

SPEAR, WE .

ADVANCES IN PHYSICS, 1977, 26 (06) :811-845

[15] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294

[16]

SZE SM, 1981, PHYSICS SEMICONDUCTO, pCH7

[17]

TREDGOLD RH, 1982, COMMUNICATION

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