ELECTRON AND HOLE MOBILITIES IN INVERSION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES

被引：113
作者：
LEISTIKO, O
GROVE, AS
SAH, CT
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1965年 / ED12卷 / 05期
关键词：
D O I：
10.1109/T-ED.1965.15489
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：248 / +
页数：1
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