CLOSED-TUBE DIFFUSION OF SILICON IN GAAS FROM SPUTTERED SILICON FILM

被引：10

作者：

OMURA, E

WU, XS

VAWTER, GA

COLDREN, L

HU, E

MERZ, JL

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 09期

关键词：

D O I：

10.1049/el:19860337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：496 / 498

页数：3

共 9 条

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[2]

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[3] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS [J].

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[4]

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[5] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J].

GREINER, ME ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :750-752

[6] SILICON DIFFUSION AT POLYCRYSTALLINE-SI/GAAS INTERFACES [J].

KAVANAGH, KL ;

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MAGEE, CW ;

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TONG, J ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1985, 47 (11) :1208-1210

[7] SELECTIVE ZN DIFFUSION IN N-GAAS WITH A SPUTTERED SI MASK AT 650-DEGREES-C [J].

OMURA, E ;

VAWTER, GA ;

COLDREN, L ;

MERZ, JL .

ELECTRONICS LETTERS, 1986, 22 (01) :23-24

[8] ALGAAS/GAAS MULTIQUANTUM WELL LASERS WITH BURIED MULTIQUANTUM WELL OPTICAL GUIDE [J].

SEMURA, S ;

OHTA, T ;

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NAKASHIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07) :L548-L550

[9] LOW THRESHOLD PLANAR BURIED HETEROSTRUCTURE LASERS FABRICATED BY IMPURITY-INDUCED DISORDERING [J].

THORNTON, RL ;

BURNHAM, RD ;

PAOLI, TL ;

HOLONYAK, N ;

DEPPE, DG .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1239-1241

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