SYSTEMATICS IN THE ELECTRONIC-STRUCTURE OF AMORPHOUS TRANSITION-METAL TIN ALLOYS

被引:2
|
作者
BOYEN, HG
INDLEKOFER, G
OELHAFEN, P
HAUSSLER, P
BAUMANN, F
MORUZZI, VL
机构
[1] HOECHST AG,CENT RES,W-6230 FRANKFURT 80,GERMANY
[2] UNIV KARLSRUHE,INST PHYS,W-7500 KARLSRUHE 1,GERMANY
[3] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1016/0921-5093(91)90025-I
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Photoemission measurements were performed on in-situ prepared amorphous TM(x)Sn100-x films (TM = Fe, Co, Ni, Pd). Valence band spectroscopy and core level analysis are in contradiction to the charge transfer model, often used to explain the magnetism and binding of transition metal/metalloid alloys. A comparison of valence-band spectra with theoretical density of states (DOS) curves indicates the existence of topological and chemical short-range order. Band structure calculations explain the stability of these alloys as being due to a hybridization pseudo-gap at the Fermi energy. A similar pseudo-gap is also expected within a nearly-free-electron model.
引用
收藏
页码:107 / 110
页数:4
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