ZN GETTERING IN INGAAS/INP INTERFACES

被引：19
|
作者：
GEVA, M
SEIDEL, TE
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 07期
关键词：
D O I：
10.1063/1.336342
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2408 / 2415
页数：8
相关论文
共 50 条
  • [1] An experimental investigation of Zn diffusion into InP and InGaAs
    He, SX
    Zhao, YL
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (02) : 149 - 151
  • [2] THE EFFECTS OF ROUGHNESS AND COMPOSITION VARIATION AT THE INP/INGAAS AND INGAAS/INP INTERFACES ON CBE GROWN QUANTUM-WELLS
    ANTOLINI, A
    FRANCESIO, L
    GASTALDI, L
    GENOVA, F
    LAMBERTI, C
    LAZZARINI, L
    PAPUZZA, C
    RIGO, C
    SALVIATI, G
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 189 - 193
  • [3] InGaAs/InP材料的Zn扩散技术
    刘英斌
    陈宏泰
    林琳
    杨红伟
    郑晓光
    半导体技术, 2008, (07) : 610 - 612
  • [4] QUANTITATIVE STRUCTURE IMAGES OF INTERFACES IN INGAAS/INP MULTILAYER HETEROSTRUCTURES
    SHIOJIRI, M
    ISSHIKI, T
    NISHIO, K
    TSUJIKURA, M
    SAIJO, H
    TAKAHASHI, Y
    OHTSUKA, N
    YABUUCHI, Y
    JOURNAL OF ELECTRON MICROSCOPY, 1992, 41 (06): : 438 - 444
  • [5] Quantitative Structure Images of Interfaces in InGaAs/InP Multilayer Heterostructures
    Shiojiri, Makoto
    Isshiki, Toshiyuki
    Nishio, Koji
    Tsujikura, Masakazu
    Saijo, Hiroshi
    Takahashi, Yasuhito
    Ohtsuka, Nobuyuki
    Yabuuchi, Yasubumi
    Microscopy, 1992, 41 (06) : 438 - 444
  • [6] Abnormal Zn diffusion along slip dislocation of InP/InGaAs/InP PIN Photodiode
    Iwasaki, T
    Iguchi, Y
    Sekiguchi, T
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 517 - 520
  • [7] BOND LENGTHS AT BURIED INASP/INP INTERFACES IN INP/INGAAS MULTI-QUANTUM-WELLS
    BOSCHERINI, F
    PASCARELLI, S
    LAMBERTI, C
    BORDIGA, S
    SCHIAVINI, GM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 97 (1-4): : 387 - 391
  • [8] INGAAS/INP SUPERLATTICE MIXING INDUCED BY ZN OR SI DIFFUSION
    SCHWARZ, SA
    MEI, P
    VENKATESAN, T
    BHAT, R
    HWANG, DM
    SCHWARTZ, CL
    KOZA, M
    NAZAR, L
    SKROMME, BJ
    APPLIED PHYSICS LETTERS, 1988, 53 (12) : 1051 - 1053
  • [9] INGAAS/INP SUPERLATTICE MIXING INDUCED BY ZN OR SI DOPING
    SCHWARZ, SA
    MEI, P
    VENKATESAN, T
    BHAT, R
    KOZA, M
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S10 - S10
  • [10] MOVPE based Zn diffusion into InP and InAsP/InGaAs heterostructures
    Vanhollebeke, K
    Moerman, I
    Van Daele, P
    Demeester, P
    2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 205 - 210
12345