A TRAPPING MECHANISM FOR AUTODOPING IN SILICON EPITAXY .1. THEORY

被引：0

|

作者：

WONG, M ^{[1
]}

REIF, R ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 01期

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中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

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页码：3 / 8

页数：6

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