TIME-DOMAIN MODELING OF IMPATT OSCILLATORS

被引：5
作者：
GOELLER, T
KAERTNER, FX
机构：
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS | 1989年 / 36卷 / 07期
关键词：
D O I：
10.1109/31.31334
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：988 / 996
页数：9
相关论文
共 25 条
[1]   A COMPARISON OF IMPATT OSCILLATOR POWER AND FREQUENCY ABOVE 100 GHZ WITH RESULTS DERIVED FROM THEORETICAL-MODELS [J].
BATES, BD .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (10) :1394-1398
[2]   LARGE-SIGNAL TIME-DOMAIN MODELING OF AVALANCHE-DIODES [J].
BLAKEY, PA ;
GIBLIN, RA ;
SEEDS, AJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1718-1728
[3]   SELF-CONSISTENT SOLUTIONS FOR IMPATT DIODE NETWORKS [J].
BRAZIL, TJ ;
SCANLAN, SO .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1981, 29 (01) :26-32
[4]   SILICON HIGH-RESISTIVITY-SUBSTRATE MILLIMETER-WAVE TECHNOLOGY [J].
BUECHLER, J ;
KASPER, E ;
RUSSER, P ;
STROHM, KM .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1986, 34 (12) :1516-1521
[5]  
BUECHLER J, UNPUB
[6]   ANALOGUE-COMPUTER MODEL FOR AN AVALANCHE-DIODE OSCILLATOR [J].
CLAASSEN, M ;
HARTH, W .
ELECTRONICS LETTERS, 1969, 5 (10) :218-&
[7]   AVALANCHE-DIODE OSCILLATORS .1. BASIC CONCEPTS [J].
CULSHAW, B ;
GIBLIN, RA ;
BLAKEY, PA .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1974, 37 (05) :577-632
[8]   NON-LINEAR CIRCUIT MODEL FOR IMPATT DIODES [J].
GANNETT, JW ;
CHUA, LO .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1978, 25 (05) :299-308
[9]   ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J].
GILDEN, M ;
HINES, ME .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :169-&
[10]   SELF-CONSISTENT LARGE-SIGNAL ANALYSIS OF A READ-TYPE IMPATT DIODE OSCILLATOR [J].
GUPTA, MS ;
LOMAX, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (08) :544-&
123