TEMPERATURE EFFECTS ON ELECTRON TRAP GENERATION AND OCCUPATION IN SIO2

被引：8
|
作者：
AVNI, E
LOEV, L
SHAPPIR, J
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期
关键词：
D O I：
10.1063/1.340988
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2700 / 2703
页数：4
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