TEMPERATURE EFFECTS ON ELECTRON TRAP GENERATION AND OCCUPATION IN SIO2

被引：8

|

作者：

AVNI, E

LOEV, L

SHAPPIR, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.340988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2700 / 2703

页数：4

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