TEMPERATURE EFFECTS ON ELECTRON TRAP GENERATION AND OCCUPATION IN SIO2

被引：8

作者：

AVNI, E

LOEV, L

SHAPPIR, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.340988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2700 / 2703

页数：4

共 20 条

[1] PERFORMANCE AND HOT-CARRIER EFFECTS OF SMALL CRYO-CMOS DEVICES [J].

AOKI, M ;

HANAMURA, S ;

MASUHARA, T ;

YANO, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) :8-18

[2] OXIDE TRAPPING UNDER SPATIALLY-VARIABLE OXIDE ELECTRIC-FIELD IN THE METAL-OXIDE-SILICON STRUCTURE [J].

AVNI, E ;

SHAPPIR, J .

APPLIED PHYSICS LETTERS, 1987, 51 (06) :463-465

[3] TRAP GENERATION AND OCCUPATION IN STRESSED GATE OXIDES UNDER SPATIALLY-VARIABLE OXIDE ELECTRIC-FIELD [J].

AVNI, E ;

SHAPPIR, J .

APPLIED PHYSICS LETTERS, 1987, 51 (22) :1857-1859

[4]

BALK P, 1984, SOLID STATE ELECTRON, V27, P709, DOI 10.1016/0038-1101(84)90019-4

[5] RECOMBINATION MECHANISMS [J].

BONCH-BRUEVICH, VL ;

LANDSBERG, EG .

PHYSICA STATUS SOLIDI, 1968, 29 (01) :9-+

[6] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J].

CHEN, IC ;

HOLLAND, S ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) :164-167

[7]

FEIGL FJ, 1976, THERMAL PHOTOSTIMULA, P118

[8] SLOW AND FAST STATES INDUCED BY HOT-ELECTRONS AT SI-SIO2 INTERFACE [J].

FISCHETTI, MV ;

GASTALDI, R ;

MAGGIONI, F ;

MODELLI, A .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3136-3144

[9] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J].

GAENSSLEN, FH ;

RIDEOUT, VL ;

WALKER, EJ ;

WALKER, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :218-229

[10] DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2 [J].

HARARI, E .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2478-2489

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