INTERFACE STUDIES AND ELECTRICAL-PROPERTIES OF PLASMA SULFIDE LAYERS ON N-TYPE INP

被引:49
作者
KLOPFENSTEIN, P [1 ]
BASTIDE, G [1 ]
ROUZEYRE, M [1 ]
GENDRY, M [1 ]
DURAND, J [1 ]
机构
[1] UNIV SCI & TECH LANGUEDOC,ECOLE NATL SUPER CHIM,UNITE CNRS,F-34075 MONTPELLIER,FRANCE
关键词
D O I
10.1063/1.340482
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:150 / 158
页数:9
相关论文
共 24 条
[1]   ION RESPONSE TO PLASMA EXCITATION-FREQUENCY [J].
BRUCE, RH .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7064-7066
[2]   THERMAL SULFIDATION ON INP [J].
DESCOUTS, B ;
DURAND, J ;
COT, L ;
POST, G ;
SCAVENEC, A .
THIN SOLID FILMS, 1985, 131 (1-2) :139-148
[3]  
FRITZSCHE D, 1980, I PHYS C SER, V50, P258
[4]   STUDY OF THE CONDENSED PHASE-DIAGRAM OF THE IN-P-S SYSTEM [J].
GENDRY, M ;
DURAND, J ;
VILLENEUVE, JM ;
COT, L .
THIN SOLID FILMS, 1986, 139 (01) :53-59
[5]  
GENDRY M, 1987, ANN CHIM-SCI MAT, V12, P97
[6]   GROWTH OF SULFIDE FILMS ON INP BY PLASMA SULFIDATION [J].
GENDRY, M ;
DURAND, J ;
COT, L ;
HOLLINGER, G .
THIN SOLID FILMS, 1987, 149 (03) :313-324
[7]  
GENDRY M, IN PRESS THIN SOLID
[8]   ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES [J].
HASEGAWA, H ;
SAWADA, T .
THIN SOLID FILMS, 1983, 103 (1-2) :119-140
[9]   ENHANCEMENT TYPE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH PLASMA ANODIC ALUMINUM-OXIDE AS THE GATE INSULATOR [J].
HIRAYAMA, Y ;
PARK, HM ;
KOSHIGA, F ;
SUGANO, T .
APPLIED PHYSICS LETTERS, 1982, 40 (08) :712-713
[10]   DEEP LEVEL TRANSIENT SPECTROSCOPY OF INTERFACE AND BULK TRAP STATES IN INP METAL-OXIDE SEMICONDUCTOR STRUCTURES [J].
INUISHI, M ;
WESSELS, BW .
THIN SOLID FILMS, 1983, 103 (1-2) :141-153