HARTREE THEORY FOR THE NEGATIVE-U EXTENDED HUBBARD-MODEL .2. FINITE TEMPERATURE

被引：86

作者：

ROBASZKIEWICZ, S ^{[1
]}

MICNAS, R ^{[1
]}

CHAO, KA ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.26.3915

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3915 / 3922

页数：8

共 66 条

[1] ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].

ADLER, D ;

YOFFA, EJ .

PHYSICAL REVIEW LETTERS, 1976, 36 (20) :1197-1200

[2]

Anderson P. W., 1976, J PHYSIQUE C, V37, P339

[3] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].

ANDERSON, PW .

PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955

[4] SUPERCONDUCTIVITY AND CHARGE-DENSITY WAVES [J].

BALSEIRO, CA ;

FALICOV, LM .

PHYSICAL REVIEW B, 1979, 20 (11) :4457-4464

[5] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686

[6] SIMPLE PARAMETRIZED MODEL FOR JAHN-TELLER SYSTEMS - VACANCY IN P-TYPE SILICON [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1980, 21 (08) :3563-3570

[7] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1979, 43 (13) :956-959

[8] SMALL-POLARON EFFECTS ON DC CONDUCTIVITY AND THERMOELECTRIC-POWER OF ONE-DIMENSIONAL MOTT SEMICONDUCTOR [J].

BARI, RA .

PHYSICAL REVIEW B, 1974, 9 (10) :4329-4339

[9] LOW-TEMPERATURE PROPERTIES OF ONE-DIMENSIONAL POLARON BAND .1. EXTREME-BAND-NARROWING REGIME [J].

BENI, G ;

PINCUS, P ;

KANAMORI, J .

PHYSICAL REVIEW B, 1974, 10 (05) :1896-1901

[10] THEORETICAL-MODEL OF SUPERCONDUCTIVITY AND MARTENSITIC-TRANSFORMATION IN A15 COMPOUNDS [J].

BILBRO, G ;

MCMILLAN, WL .

PHYSICAL REVIEW B, 1976, 14 (05) :1887-1892

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