FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES

被引：193

作者：

MEAD, CA

SPITZER, WG

机构：

来源：

PHYSICAL REVIEW LETTERS | 1963年 / 10卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.10.471

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：471 / &

共 11 条

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[3]

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[4]

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[6]

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[10] PARAMAGNETIC RESONANCE OF THE SHALLOW ACCEPTORS ZN AND CD IN GAAS [J].

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :68-69

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