Thin-film thermocouples of Ge doped with Au and B

被引：10
作者：
Berlicki, TM
Murawski, E
Muszynski, M
Osadnik, SJ
Prociow, EL
机构：
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1995年 / 50卷 / 03期
关键词：
thermal sensors; thin-film sensors; thin Ge films;
D O I：
10.1016/0924-4247(96)80106-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High thermoelectric power (S greater than or equal to 300 mu V K-1; rho congruent to 10(-4) Omega m) has been achieved for germanium layers doped with gold deposited by evaporation. The relative simplicity and good reproducibility of the method seems to be promising for thermopiles in some types of microsensors.
引用
收藏
页码：183 / 186
页数：4
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