INFLUENCES OF DARK LINE DEFECTS ON CHARACTERISTICS OF ALGAAS/GAAS QUANTUM-WELL LASERS GROWN ON SI SUBSTRATES

被引：22

作者：

HASEGAWA, Y ^{[1
]}

EGAWA, T ^{[1
]}

JIMBO, T ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL, MICROSTRUCT DEVICES RES CTR, SHOWA KU, NAGOYA, AICHI 466, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 6A期

关键词：

ALGAAS/GAAS LASERS ON SI; CONTINUOUS-WAVE AGING OPERATION; RAPID DEGRADATION; DARK LINE DEFECTS; ELECTROLUMINESCENCE TOPOGRAPHY;

D O I：

10.1143/JJAP.34.2994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the influences of dark line defects (DLD's) on characteristics of AlGaAs/GaAs quantum well lasers grown on Si substrates under continuous-wave aging operation. Electroluminescence topography revealed that rapid degradation of an AlGaAs/GaAs laser on Si was caused by the rapid growth of [100] DLD's. The generation of [100] DLD's causes the decrease of internal differential quantum efficiency (eta) due to the increased number of nonradiative recombination centers. It also causes decrease of the differential gain coefficient (beta) and slow increase of driving current at the initial slow degradation stage. At the subsequent rapid degradation stage, rapid increase of driving current is caused by the drastic increase of internal loss (alpha(i)) and decrease of beta due to the growth of the DLD's. It is also found that the DLD growth velocity depends more strongly on the injected current density than on the junction temperature.

引用

页码：2994 / 2999

页数：6

共 22 条

[1] HIGH UNIFORMITY OF THRESHOLD VOLTAGE FOR GAAS/ALGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS GROWN ON A SI SUBSTRATE [J].

AIGO, T ;

JONO, A ;

TACHIKAWA, A ;

HIRATSUKA, R ;

MORITANI, A .

APPLIED PHYSICS LETTERS, 1994, 64 (23) :3127-3129

[2] GAAS-BASED DIODE-LASERS ON SI WITH INCREASED LIFETIME OBTAINED BY USING STRAINED INGAAS ACTIVE LAYER [J].

CHOI, HK ;

WANG, CA ;

KARAM, NH .

APPLIED PHYSICS LETTERS, 1991, 59 (21) :2634-2635

[3] IMPROVED CHARACTERISTICS OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON SI SUBSTRATES BACK-COATED WITH SIO2 BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

EGAWA, T ;

NOZAKI, S ;

SOGA, T ;

JIMBO, T ;

UMENO, M .

APPLIED PHYSICS LETTERS, 1991, 58 (12) :1265-1267

[4] OPTICAL AND ELECTRICAL DEGRADATIONS OF GAAS-BASED LASER-DIODES GROWN ON SI SUBSTRATES [J].

EGAWA, T ;

JIMBO, T ;

HASEGAWA, Y ;

UMENO, M .

APPLIED PHYSICS LETTERS, 1994, 64 (11) :1401-1403

[5] EFFECTS OF DISLOCATION AND STRESS ON CHARACTERISTICS OF GAAS-BASED LASER GROWN ON SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

EGAWA, T ;

HASEGAWA, Y ;

JIMBO, T ;

UMENO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (03) :791-797

[6] CURRENT-DENSITY DEPENDENCE FOR DARK-LINE DEFECT GROWTH VELOCITY IN STRAINED INGAAS/ALGAAS QUANTUM-WELL LASER-DIODES [J].

FUKAGAI, K ;

ISHIKAWA, S ;

ENDO, K ;

YUASA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (3A) :L371-L373

[7] DARK DEFECTS IN INGAASP INP DOUBLE HETEROSTRUCTURE LASERS UNDER ACCELERATED AGING [J].

FUKUDA, M ;

WAKITA, K ;

IWANE, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1246-1250

[8] LOW-TEMPERATURE OPERATING LIFE OF CONTINUOUS 300-K ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN ON SI [J].

HALL, DC ;

HOLONYAK, N ;

DEPPE, DG ;

RIES, MJ ;

MATYI, RJ ;

SHICHIJO, H ;

EPLER, JE .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) :6844-6849

[9] INJECTION-ENHANCED DISLOCATION GLIDE UNDER UNIAXIAL STRESS IN GAAS-(GAAL)AS DOUBLE HETEROSTRUCTURE LASER [J].

KAMEJIMA, T ;

ISHIDA, K ;

MATSUI, J .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (02) :233-240

[10] SELECTIVE-AREA-GROWN ALGAAS GAAS SINGLE QUANTUM-WELL LASERS ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KOBAYASHI, Y ;

EGAWA, T ;

JIMBO, T ;

UMENO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (10B) :L1781-L1783

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