MEASUREMENT AND ANALYSIS OF HOT-CARRIER-STRESS EFFECT ON NMOSFETS USING SUBSTRATE CURRENT CHARACTERIZATION

被引：18

作者：

NISSANCOHEN, Y

FRANZ, GA

KWASNICK, RF

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 07期

关键词：

D O I：

10.1109/EDL.1986.26433

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：451 / 453

页数：3

共 10 条

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[2]

ABBAS SA, 1975, IEDM TECH DIG, P35

[3]

Akers L. A., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P80

[4]

CHEN KL, 1985, IEEE T ELECTRON DEV, V32, P386, DOI 10.1109/T-ED.1985.21953

[5] BAMBI - A DESIGN-MODEL FOR POWER MOSFETS [J].

FRANZ, AF ;

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IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1985, 4 (03) :177-189

[6] HOT-ELECTRON AND HOLE-EMISSION EFFECTS IN SHORT N-CHANNEL MOSFETS [J].

HOFMANN, KR ;

WERNER, C ;

WEBER, W ;

DORDA, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :691-699

[7] RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION [J].

HSU, FC ;

TAM, S .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :50-52

[8]

KENNEDY DP, 1973, IEDM, P160

[9] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J].

NING, TH ;

COOK, PW ;

DENNARD, RH ;

OSBURN, CM ;

SCHUSTER, SE ;

YU, HN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :346-353

[10] AN EMPIRICAL-MODEL FOR DEVICE DEGRADATION DUE TO HOT-CARRIER INJECTION [J].

TAKEDA, E ;

SUZUKI, N .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :111-113

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