CORRELATED DISORDER IN 2-BAND MODELS FOR AMORPHOUS-SEMICONDUCTORS

被引：0

作者：

MONTGOMERY, CG

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.31.6525

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6525 / 6530

页数：6

共 13 条

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