AN AMBIPOLAR FIELD-EFFECT TRANSISTOR MODEL

被引：0
|
作者：
PFLEIDERER, H [1 ]
KUSIAN, W [1 ]
BULLEMER, B [1 ]
机构：
[1] HSCH BUNDESWEHR MUNCHEN, FACHBEREICH ELEKTROTECH, INST PHYS, D-8014 NEUBIBERG, FED REP GER
来源：
SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS | 1985年 / 14卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
TRANSISTORS, FIELD EFFECT
引用
收藏
页码：69 / 75
页数：7
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