STRAIN TRANSFER BETWEEN GAAS GAINAS STRAINED LAYERS

被引:0
作者
BANGERT, U
CHARSLEY, P
FAUX, DA
HARVEY, AJ
DIXON, R
GOODHEW, PJ
EMENY, M
WHITEHOUSE, CR
机构
[1] ROYAL SIGNALS & RADAR ESTAB, MALVERN WR14 3PS, WORCS, ENGLAND
[2] UNIV SURREY, DEPT MAT SCI & ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
来源
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期
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D O I
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中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Cleaved wedge samples have been used to assess the strain distribution in several strained layer superlattices grown by MBE. The materials system is GaAs/Ga(1-x)In(x)As with x = 0.2. A series of wells of increasing thickness has been studied; the strain in the well and the extent of the strain transfer to the barrier material between the wells have been assessed from the curvature of thickness fringes. The extent to which this contrast results from relaxation at the wedge corner is discussed. A finite element programme has been used to calculate displacement and strain distributions in the structure and a comparison is made with the TEM observations.
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页码:287 / 291
页数:5
相关论文
共 2 条
[1]   EFFECTS OF STRAIN ON THE ELECTRON-DIFFRACTION CONTRAST AT III-V-COMPOUND HETEROSTRUCTURE INTERFACES [J].
BANGERT, U ;
CHARSLEY, P .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 59 (03) :629-643
[2]  
BANGERT U, 1988, I PHYS C SER, V93, P397