REACTION-KINETICS OF NICKEL SILICON MULTILAYER FILMS

被引：95

作者：

CLEVENGER, LA ^{[1
]}

THOMPSON, CV ^{[1
]}

CAMMARATA, RC ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.99644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：795 / 797

页数：3

共 14 条

[1]

CLEVENGER LA, 1987 P S MULT SYNTH

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[5] GROWTH-KINETICS OF PLANAR BINARY DIFFUSION COUPLES - THIN-FILM CASE VERSUS BULK CASES [J].

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[6] DIFFERENTIAL SCANNING CALORIMETRY STUDY OF SOLID-STATE AMORPHIZATION IN MULTILAYER THIN-FILM NI/ZR [J].

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SOMEKH, RE .

APPLIED PHYSICS LETTERS, 1987, 50 (10) :566-568

[7]

HIGHMORE RJ, IN PRESS J LESS COMM

[8]

KISSINGER HE, 1957, ANAL CHEM, V29, P1702, DOI DOI 10.1021/AC60131A045

[9] TEMPERATURE AND THICKNESS EFFECTS ON THE EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-GERMANIUM FILMS [J].

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WICKERSHAM, CE .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :672-675

[10]

MURARKA SP, 1983, SLILICIDES VLSI APPL, P164

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