HIGH-FIELD DRIFT VELOCITY OF SILICON INVERSION LAYERS - MONTE-CARLO CALCULATION

被引：24

作者：

BASU, PK ^{[1
]}

机构：

[1] CTR ADV STUDY RADIO PHYS & ELECTR,CALCUTTA 700009,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 01期

关键词：

D O I：

10.1063/1.323386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：350 / 353

页数：4

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[1] CHATTOPADHYAY D, 1974, J APPL PHYS, V45, P4931, DOI 10.1063/1.1663156
[2] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS
CHENG, YC
SULLIVAN, EA
[J]. SURFACE SCIENCE, 1973, 34 (03) : 717 - 731
[3] DORDA G, 1973, FESTKORPERPROBLEME, V13, P215
[4] SURFONS AND ELECTRON-MOBILITY IN SILICON INVERSION LAYERS
EZAWA, H
KAWAJI, S
NAKAMURA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) : 126 - 155
[5] EFFECTS OF A TILTED MAGNETIC FIELD ON A 2-DIMENSIONAL ELECTRON GAS
FANG, FF
STILES, PJ
[J]. PHYSICAL REVIEW, 1968, 174 (03): : 823 - &
[6] FANG FF, 1970, J APPL PHYS, V41, P1925
[7] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE
FAWCETT, W
BOARDMAN, AD
SWAIN, S
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &
[8] HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS
HESS, K
SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1254 - 1257
[9] WARM AND HOT CARRIERS IN SILICON SURFACE-INVERSION LAYERS
HESS, K
SAH, CT
[J]. PHYSICAL REVIEW B, 1974, 10 (08) : 3375 - 3386
[10] DEVIATIONS FROM OHMS LAW IN N-CDS AT 77K
HESS, K
VANA, H
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (06): : L150 - L151