OPTICALLY INDUCED CHANGES IN THE SUBBAND GAP ABSORPTION OF HYDROGENATED AMORPHOUS-SILICON

被引：3
作者：
GAL, M
HANEMAN, D
PAUL, GL
机构：
[1] Univ of New South Wales, Kensington, Aust, Univ of New South Wales, Kensington, Aust
来源：
SOLID STATE COMMUNICATIONS | 1987年 / 62卷 / 07期
关键词：
D O I：
10.1016/0038-1098(87)91109-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
SEMICONDUCTING SILICON
引用
收藏
页码：509 / 511
页数：3
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