OPTICALLY INDUCED CHANGES IN THE SUBBAND GAP ABSORPTION OF HYDROGENATED AMORPHOUS-SILICON

被引：3

作者：

GAL, M

HANEMAN, D

PAUL, GL

机构：

[1] Univ of New South Wales, Kensington, Aust, Univ of New South Wales, Kensington, Aust

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 62卷 / 07期

关键词：

D O I：

10.1016/0038-1098(87)91109-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：509 / 511

页数：3

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