RAPID DIRECT WRITING OF HIGH-ASPECT-RATIO TRENCHES IN SILICON

被引：18
|
作者：
TREYZ, GV
BEACH, R
OSGOOD, RM
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 08期
关键词：
D O I：
10.1063/1.98178
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：475 / 477
页数：3
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