SURFACE-STRUCTURE OF SILICON-CARBIDE IRRADIATED WITH HELIUM-IONS WITH MONOENERGY AND CONTINUOUS ENERGY-DISTRIBUTIONS

被引：16
作者：
MIYAGAWA, S
ATO, Y
MIYAGAWA, Y
机构：
[1] Government Industrial Research Institute, Kita-ku, Nagoya, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 12期
关键词：
D O I：
10.1063/1.330468
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
SILICON CARBIDE
引用
收藏
页码：8697 / 8705
页数：9
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