STUDY OF PT DIFFUSION IN THIN COPPER-FILMS UNDER 2 KINETIC REGIMES

被引：6

作者：

ALESHIN, AN ^{[1
]}

EGOROV, VK ^{[1
]}

BOKSTEIN, BS ^{[1
]}

KURKIN, PV ^{[1
]}

机构：

[1] MOSCOW STEEL & ALLOYS INST,MOSCOW 117936,RUSSIA

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.359154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The diffusion of platinum in thin copper films has been studied by Rutherford backscattering spectrometry (RBS) under the kinetic conditions B (within the temperature range of 200-290 °C) and C (room temperature). The RBS spectra were modified to concentration curves for both bulk and grain boundary (GB) diffusion. Under the kinetic regime B the triple products KδDb (Db is the GB diffusion coefficient, δ is the GB width, K is the enrichment ratio) were obtained using Whipple's model. Under the kinetic regime C the absolute value of the GB diffusion coefficient of Pt in Cu films was obtained. A comparison between the data on GB diffusion for the kinetics B extrapolated to room temperature and the data on GB diffusion for the kinetics C enables one to derive the product Kδ and to separate the contribution of segregation into the GB diffusion of Pt in Cu films. © 1995 American Institute of Physics.

引用

页码：6239 / 6243

页数：5

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