AUGER-ELECTRON SPECTROSCOPY STUDY OF GAAS LAYER GROWTH ON INP SUBSTRATE

被引：3
作者：
MATSUI, Y
HAYASHI, H
YOSHIDA, K
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(87)90400-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：245 / 248
页数：4
相关论文
共 10 条
  • [1] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY
    DAVIES, GJ
    HECKINGBOTTOM, R
    OHNO, H
    WOOD, CEC
    CALAWA, AR
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 290 - 292
  • [2] EFFECT OF WELL SIZE FLUCTUATION ON PHOTO-LUMINESCENCE SPECTRUM OF ALAS-GAAS SUPER-LATTICES
    GOLDSTEIN, L
    HORIKOSHI, Y
    TARUCHA, S
    OKAMOTO, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1489 - 1492
  • [3] LI K, 1985, 17TH P INT C PHYS SE
  • [4] (INAS)M(GAAS)N SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    MATSUI, Y
    HAYASHI, H
    TAKAHASHI, M
    KIKUCHI, K
    YOSHIDA, K
    [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) : 280 - 282
  • [5] TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY IN (INAS)3(GAAS)1 SUPERLATTICES
    MATSUI, Y
    HAYASHI, H
    YOSHIDA, K
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (16) : 1060 - 1062
  • [6] AUGER-ELECTRON SPECTROSCOPY STUDY OF GAAS LAYER GROWTH ON INP SUBSTRATE
    MATSUI, Y
    HAYASHI, H
    YOSHIDA, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 219 - 221
  • [7] ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS IN GAAS-ALAS QUANTUM WELL STRUCTURES AND THEIR SUPPRESSION BY INSERTION OF SMOOTHING PERIOD IN MOLECULAR-BEAM EPITAXY
    SAKAKI, H
    TANAKA, M
    YOSHINO, J
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L417 - L420
  • [8] PHASE-LOCKED EPITAXY USING RHEED INTENSITY OSCILLATION
    SAKAMOTO, T
    FUNABASHI, H
    OHTA, K
    NAKAGAWA, T
    KAWAI, NJ
    KOJIMA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09): : L657 - L659
  • [9] MONO-LAYER AND BI-LAYER SUPERLATTICES OF GAAS AND ALAS
    SANO, N
    KATO, H
    NAKAYAMA, M
    CHIKA, S
    TERAUCHI, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L640 - L641
  • [10] ESCAPE LENGTH OF AUGER ELECTRONS
    TARNG, ML
    WEHNER, GK
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1534 - 1540
1