SELF-ALIGNED TI SILICIDE FORMED BY RAPID THERMAL ANNEALING

被引:36
作者
BRAT, T
OSBURN, CM
FINSTAD, T
LIU, J
ELLINGTON, B
机构
[1] MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA
[2] N CAROLINA STATE UNIV, DEPT PHYS, RALEIGH, NC 27695 USA
[3] N CAROLINA STATE UNIV, RALEIGH, NC 27695 USA
关键词
D O I
10.1149/1.2108933
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1451 / 1458
页数:8
相关论文
共 77 条
[11]   TRANSMISSION ELECTRON-MICROSCOPY STUDIES ON THE LATERAL GROWTH OF NICKEL SILICIDES [J].
CHEN, SH ;
ZHENG, LR ;
CARTER, CB ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :258-263
[12]   TITANIUM SILICIDE FORMATION ON BF2+-IMPLANTED SILICON [J].
CHOW, TP ;
KATZ, W ;
SMITH, G .
APPLIED PHYSICS LETTERS, 1985, 46 (01) :41-43
[13]   REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J].
CHOW, TP ;
STECKL, AJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1480-1497
[14]  
COOPER CB, 1984, MATER RES SOC S P, V23, P739
[15]   1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].
CROWDER, BL ;
ZIRINSKY, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :369-371
[16]   INTERACTION OF EVAPORATED PALLADIUM AND TITANIUM FILMS WITH SINGLE-CRYSTAL SILICON [J].
FINSTAD, TG ;
NICOLET, MA .
THIN SOLID FILMS, 1980, 68 (02) :393-405
[17]   MOSI2 FORMATION BY RAPID ISOTHERMAL ANNEALING [J].
FULKS, RT ;
POWELL, RA ;
STACY, WT .
ELECTRON DEVICE LETTERS, 1982, 3 (07) :179-181
[18]   HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP [J].
GAT, A .
ELECTRON DEVICE LETTERS, 1981, 2 (04) :85-87
[19]   APPLICATION OF TITANIUM POLYCIDE INTERCONNECTS IN A SILICON-GATE PROCESS [J].
GILFILLAN, CD ;
SPINELLA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :730-732
[20]   FORMATION AND PROPERTIES OF TISI2 FILMS [J].
GULDAN, A ;
SCHILLER, V ;
STEFFEN, A ;
BALK, P .
THIN SOLID FILMS, 1983, 100 (01) :1-7