GAAS/(GAAL)AS DEEP ZN-DIFFUSED CHANNELED-SUBSTRATE LASER

被引：4

作者：

CHOI, HK ^{[1
]}

WANG, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.332431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3600 / 3602

页数：3

共 13 条

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[9]

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[10] REDUCTION OF THRESHOLD CURRENT IN GAALAS TERRACED SUBSTRATE LASERS [J].

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