FOCUSED-ION-BEAM IMPLANTATION OF GA IN ELEMENTAL AND COMPOUND SEMICONDUCTORS

被引：27

作者：

GNASER, H ^{[1
]}

KALLMAYER, C ^{[1
]}

OECHSNER, H ^{[1
]}

机构：

[1] UNIV KAISERSLAUTERN,INST OBERFLACHEN & SCHICHTANALYT,D-67663 KAISERSLAUTERN,GERMANY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.587978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Small-area focused-ion-beam implantation of 25 keV Ga+ in Si, Ge, InP, InSb, and ZnSe was investigated to determine implantation fluences by means of secondary-ion mass spectroscopy. In all materials the Ga peak concentration exhibited an essentially linear increase with fluence up to some 1016 cm-2; for higher values the Ga concentration tended to saturate. These values appeared roughly inversely correlated with the specimens sputtering yields and agreed thus with the predictions of a model of ion retention in the presence of concurrent sputter erosion. Computer simulations with the dynamic binary-collision-approximation code T-DYN produced a fluence-dependent evolution of the Ga concentrations in the examined semiconductors, agreeing quantitatively with the experiments.

引用

页码：19 / 26

页数：8

共 34 条

[1]

[Anonymous], 1987, SURF INTERFACE ANAL

[2] RANGE AND RANGE STRAGGLING OF 15 TO 350 KEV GA-69 IN AMORPHOUS-SILICON [J].

BEHAR, M ;

BIERSACK, JP ;

FICHTNER, PFP ;

FINK, D ;

LEITE, CVD ;

OLIVIERI, CA ;

PATNAIK, BK ;

DESOUZA, JP ;

ZAWISLAK, FC .

RADIATION EFFECTS LETTERS, 1984, 85 (03) :117-122

[3] COLLISION CASCADE LIMIT TO SPATIAL-RESOLUTION IN FOCUSED ION-BEAM PROCESSES [J].

BETZ, G ;

RUDENAUER, F .

APPLIED SURFACE SCIENCE, 1991, 51 (1-2) :103-112

[4] SECONDARY-NEUTRAL MICROPROBE WITH ELECTRON-GAS POST-IONIZATION [J].

BIECK, W ;

GNASER, H ;

OECHSNER, H .

APPLIED PHYSICS LETTERS, 1993, 63 (06) :845-847

[5] T-DYN MONTE-CARLO SIMULATIONS APPLIED TO ION ASSISTED THIN-FILM PROCESSES [J].

BIERSACK, JP ;

BERG, S ;

NENDER, C .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 :21-27

[6] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].

BIERSACK, JP ;

HAGGMARK, LG .

NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269

[7] MODIFICATION OF CRYSTALLINE SEMICONDUCTOR SURFACES BY LOW-ENERGY AR+ BOMBARDMENT - SI(111) AND GE(100) [J].

BOCK, W ;

GNASER, H ;

OECHSNER, H .

SURFACE SCIENCE, 1993, 282 (03) :333-341

[8] THE EFFECTS OF MODEL PARAMETER VARIATIONS ON HIGH-FLUENCE ION-IMPLANTATION [J].

CARTER, G ;

NOBES, MJ ;

KATARDJIEV, IV ;

ABRIL, I ;

GRASMARTI, A ;

JIMENEZRODRIGUEZ, JJ ;

PEINADOR, JA .

VACUUM, 1993, 44 (08) :783-789

[9] ION SORPTION IN PRESENCE OF SPUTTERING [J].

CARTER, G ;

COLLIGON, JS ;

LECK, JH .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (508) :299-&

[10] IMAGING MICROANALYSIS OF SURFACES WITH A FOCUSED GALLIUM PROBE [J].

CHABALA, JM ;

LEVISETTI, R ;

WANG, YL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03) :910-914

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