STUDY OF HOT-CARRIER DEGRADATION IN SUBMICROMETER LDD-NMOSFETS FROM 1/F NOISE AND CHARGE-PUMPING CURRENT MEASUREMENTS AT DIFFERENT TEMPERATURE ANNEALS

被引：3

作者：

ANG, DS

LING, CH

YEOW, YT

机构：

[1] Department of Electrical Engineering, National University of Singapore, Singapore

[2] Department of Electrical Engineering, University of Queensland, Brisbane

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00054-C

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 1/f noise and variable frequency charge pumping current are used to probe hot-carrier induced oxide and interface traps. A strong correlation between the noise and charge pumping data is observed, confirming carrier capture by near-interface traps as the physical origin of 1/f noise in MOS transistors. Results also suggest an oxide trap density that decreases with distance from the interface, and increases with energy from mid bandgap to the Si conduction band edge.

引用

页码：257 / 260

页数：4

共 4 条

[1] A STUDY OF HOT-CARRIER DEGRADATION IN NMOSFETS BY GATE CAPACITANCE AND CHARGE-PUMPING CURRENT
LING, CH
TAN, SE
ANG, DS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (07) : 1321 - 1328
[2] A COUPLED STUDY BY FLOATING-GATE AND CHARGE-PUMPING TECHNIQUES OF HOT-CARRIER-INDUCED DEFECTS IN SUBMICROMETER LDD N-MOSFETS
VUILLAUME, D
MARCHETAUX, JC
LIPPENS, PE
BRAVAIX, A
BOUDOU, A
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (04) : 773 - 781
[3] A unified approach for hot-carrier degradation of current gain and 1/f noise of polysilicon emitter bipolar transistors
Decoutere, S
Simoen, E
Vancuyck, G
Deferm, L
Claeys, C
PROCEEDINGS OF THE 1997 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1997, : 104 - 107
[4] Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements
Goh, YH
Ling, CH
ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, : 23 - 27

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