PASSIVATION OF INGAAS/INP SURFACE QUANTUM-WELLS BY ION-GUN HYDROGENATION

被引：12

作者：

CHANG, YL ^{[1
]}

TAN, IH ^{[1
]}

REAVES, C ^{[1
]}

MERZ, J ^{[1
]}

HU, E ^{[1
]}

DENBAARS, S ^{[1
]}

FROVA, A ^{[1
]}

EMILIANI, V ^{[1
]}

BONANNI, B ^{[1
]}

机构：

[1] UNIV ROMA LA SAPIENZA,DIPARTIMENTO FIS,I-00185 ROME,ITALY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 20期

关键词：

D O I：

10.1063/1.111483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the optical properties of an InGaAs/InP surface quantum well before and after room-temperature low-energy ion-gun hydrogenation. The luminescence efficiency of the surface quantum well was enhanced by up to two orders of magnitude after hydrogenation. Our experiments also reveal that the nonradiative recombination centers at the etched surface can be saturated by increasing excitation density for the photoluminescence measurement. To ''unmask'' the effects of the saturation of recombination sites, for a true comparison of passivation effects brought about by different surface treatments, an excitation density below 1 W/cm2 is required.

引用

页码：2658 / 2660

页数：3

共 7 条

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