ELECTRON-TRANSPORT IN A NONUNIFORM MAGNETIC-FIELD

被引：51

作者：

LEADBEATER, ML ^{[1
]}

FODEN, CL ^{[1
]}

BURKE, TM ^{[1
]}

BURROUGHES, JH ^{[1
]}

GRIMSHAW, MP ^{[1
]}

RITCHIE, DA ^{[1
]}

WANG, LL ^{[1
]}

PEPPER, M ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1995年 / 7卷 / 25期

关键词：

D O I：

10.1088/0953-8984/7/25/001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have used MBE regrowth technology to produce a non-planar 2DEG at a GaAs/AlGaAs heterojunction grown over an etched facet. By applying a uniform magnetic field to this structure we obtain a spatially varying field component normal to the 2DEG. When the magnetic field is applied in the plane of the substrate, the resistance measured from one side of the facet to the other is found to be quantized at approximately the quantum Hall plateaux. Rotating the plane of the sample with respect to the magnetic field allows us to investigate edge state propagation and reflection in the different regions of the sample. By making the appropriate four-terminal resistance measurement we can directly determine the filling factor on the facet. In particular we study the novel situation where the transverse field component changes sign on the facet and the cyclotron orbits rotate in the opposite sense to those on the planar region.

引用

页码：L307 / L315

页数：9

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