SIMPLE CRITERION ON COLLOID FORMATION IN SIO2 GLASSES BY ION-IMPLANTATION

被引：67

作者：

HOSONO, H

机构：

[1] Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9A期

关键词：

ION IMPLANTATION; SIO2; GLASS; COLLOID FORMATION; NANOCOMPOSITE;

D O I：

10.1143/JJAP.32.3892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple criterion as a first approximation to predict the formation of elementary colloids of implants in SiO2 glasses by ion implantation has been proposed. The criterion predicts that colloid formation occurs when free energy of formation of oxides of implants is greater than that of SiO2 at approximately 3000 K, which corresponds to the fictive temperature of implanted layers. The prediction is compared with observations reported so far.

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页码：3892 / 3894

页数：3

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