STUDIES ON CUIN PRECURSOR FOR THE PREPARATION OF CUINSE2 THIN-FILMS BY THE SELENIZATION TECHNIQUE

被引：27
作者：
GUPTA, A [1 ]
SHIRAKATA, S [1 ]
ISOMURA, S [1 ]
机构：
[1] EHIME UNIV,FAC ENGN,MATSUYAMA,EHIME 790,JAPAN
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 32卷 / 02期
关键词：
D O I：
10.1016/0927-0248(94)90299-2
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The effect of temperature on the degree of alloy formation between Cu and In layers has been studied for the preparation of CuInSe2 films by the selenization technique. The mechanism of alloy formation is different in bilayers annealed at temperatures lower and higher than the melting point of In, or prepared by deposition of Cu and In at 200-degrees-C and 150-degrees-C, respectively. While the annealing of the precursor up to 200-degrees-C produces an alloy in the interface region of Cu and In layers, annealing at 500-degrees-C completely changes its morphology. The effect of alloy formation in the precursor on the selenized CuInSe2 films is studied using structural, morphological, optical and compositional properties.
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页码：137 / 149
页数：13
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