MOLECULAR-BEAM EPITAXIAL-GROWTH OF PULSE-DOPED PSEUDOMORPHIC GAALAS GAINAS TRANSISTORS WITH HIGH-GAIN AND LOW-NOISE PROPERTIES

被引：10
作者：
HOKE, WE
LYMAN, PS
LABOSSIER, WH
HUANG, JC
ZAITLIN, M
HENDRIKS, H
FLYNN, G
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期
关键词：
D O I：
10.1116/1.585033
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：397 / 401
页数：5
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