DETECTION OF GA VACANCIES IN ELECTRON-IRRADIATED GAAS BY POSITRONS

被引：74

作者：

HAUTOJARVI, P

MOSER, P

STUCKY, M

CORBEL, C

PLAZAOLA, F

机构：

[1] CEN,SERV PHYS 85X,F-38041 GRENOBLE,FRANCE

[2] CENS,INST NATL SCI & TECH,F-91191 GIF SUR YVETTE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 12期

关键词：

D O I：

10.1063/1.96677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：809 / 810

页数：2

共 13 条

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[10] AN ELECTRON-TRAPPING DEFECT LEVEL ASSOCIATED WITH THE 235-K ANNEALING STAGE IN ELECTRON-IRRADIATED NORMAL-GAAS [J].

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