SELECTIVE ETCHING CHARACTERISTICS OF HF FOR ALXGA1-XAS/GAAS

被引：48

作者：

WU, XS ^{[1
]}

COLDREN, LA ^{[1
]}

MERZ, JL ^{[1
]}

机构：

[1] ACAD SCI CHINA,SHANGHAI INST MET,SHANGHAI,PEOPLES R CHINA

来源：

关键词：

D O I：

10.1049/el:19850394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：558 / 559

页数：2

共 7 条

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[2]

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[3]

KERN W, 1978, RCA REV, V39, P227

[4]

KONIYA S, 1976, J APPL PHYS, V47, P3367

[5] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J].

LOGAN, RA ;

REINHART, FK .

[6] GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING [J].

MERZ, JL ;

LOGAN, RA ;

SERGENT, AM .

[7]

Yuan Y. R., 1983, Journal of Lightwave Technology, VLT-1, P630, DOI 10.1109/JLT.1983.1072156